Engineering

Appropriate for upper level undergraduate or graduate courses in microwave transistor amplifiers and oscillators. It would also be useful for short-courses in companies that design and produce these devises.

A unified presentation of the analysis and design of microwave transistor amplifiers (and oscillators) — using scattering parameters techniques.

• A clear and straightforward presentation designed to be comprehensive. A self-contained text. Pg.___

• Examples based on practical designs. Pg.___

• Over 300 figures, 153 problems, and 14 appendices. Pg.___

• Presents material on: transmission-lines concepts; power waves and generalized scattering parameters; measurements of scattering parameters; bipolar and field-effect transistors; power gain expressions; constant VSWR circles; gain, noise, and VSWR design trade offs; broadband amplifiers, high-power amplifiers; oscillator theory, and DROs. Pg.___

• A new appendix using CAD methods. Pg.___

• A 65% increase in the number of problems and figures. Pg.___

• A solution manual. Pg.___

• NEW—Presents material on: transmission-lines concepts; power waves and generalized scattering parameters; measurements of scattering parameters; bipolar and field-effect transistors; power gain expressions; constant VSWR circles; gain, noise, and VSWR design trade offs; broadband amplifiers, high-power amplifiers; oscillator theory, and DROs.
• NEW—A new appendix using CAD methods.
• NEW—A 65% increase in the number of problems and figures.
• NEW—A solution manual.

Preface.


1. Representations of Two-Port Networks.


2. Matching Networks and Signal Flow Graphs.


3. Microwave Transistor Amplifier Design.


4. Noise, Broadband, and High-Power Design Methods.


5. Microwave Transistor Oscillator Design.


Appendix: Computer-Aided Designs.


Appendix A: A. 1. Circle Equations: Bilinear Transformation, A. 2. Derivation of the Input and Output Stability Circles.


Appendix B: Stability Conditions.


Appendix C: Unconditional Stability Conditions.


Appendix D: Derivation of the Unilateral Constant- Gain Circles.


Appendix E: E. 1. Analysis of (3.65) and (3.6.6) for ..., E. 2. Condition for a Simultaneous Conjugate Match.


Appendix F: Derivation of Gt, max.


Appendix G: Derivation of the Constant Operating Power-Gain Circles.


Appendix H: Expressions for ml.


Appendix I: Constant VSWR Circles.


Appendix J: Mapping of Circles.


Appendix K: Noise Concepts.


Appendix L: Noise Figure of an Amplifier,


Appendix M: Conditions for a Stable Oscilllation.


Index.

Microwave Circuits and Devices  [CORE TEXTS]   (Electrical and Computing Engineering)

A unified presentation of the analysis and design of microwave transistor amplifiers (and oscillators) — using scattering parameters techniques.

FEATURES:

• A clear and straightforward presentation designed to be comprehensive. A self-contained book.
• Examples based on practical designs.
• Over 300 figures, 153 problems, and 14 appendices.

NEW TO THIS EDITION:

• NEW—Presents material on: transmission-lines concepts; power waves and generalized scattering parameters; measurements of scattering parameters; bipolar and field-effect transistors; power gain expressions; constant VSWR circles; gain, noise, and VSWR design trade offs; broadband amplifiers, high-power amplifiers; oscillator theory, and DROs.
• NEW—A new appendix using CAD methods.
• NEW—A 65% increase in the number of problems and figures.

Solutions Manual, 2/E
Gonzalez
©1997 | Prentice Hall | Paper | Instock
ISBN-10: 0132712555 | ISBN-13: 9780132712552

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